The SSD M.2 2280 4TB 9100 PRO Samsung (MZ-VAP4T0BW) opens up new horizons of performance for your computer, laptop or gaming system. This internal SSD features a state-of-the-art PCI Express 5.0 x4 interface that provides phenomenal read speeds of up to 14,800 Mb/s and write speeds of up to 13,400 Mb/s. Thanks to such power, you will be able to run voluminous programs without delays, process large amounts of data with ease, and enjoy games with high graphic requirements without any lags.
This drive, built on the basis of 3D TLC NAND flash memory, ensures high reliability and service life, adding confidence in the safety of your data. An important advantage of this model is the optimized power consumption of only 7.6 W, which ensures efficient operation without excessive heat or battery loss, which is especially important for portable devices.
The incredible random read/write speed of up to 2,200K/2,600K IOPS allows you to solve parallel data processing tasks with impressive efficiency. This makes the SSD 9100 PRO an excellent choice for high-performance work with artificial intelligence or graphic designs where every second counts.
The compact design with a thickness of only 2.38mm and a weight of 9g makes it ideal for use in laptops and other devices where space is limited. In addition, support for up to 8 TB of memory provides maximum flexibility in storing the data you need.
Use the Samsung Magician software to optimize the performance and security of your drive. This software provides an intuitive interface, optimization, monitoring and reliable protection of your data.
Advanced thermal efficiency and 5nm controller architecture make the 9100 PRO a model in the SSD class with increased energy efficiency by 49% compared to previous models. You will get exceptional performance stability even during the heaviest loads.
Increase your productivity and open up new opportunities with the Samsung 9100 PRO, the embodiment of innovation and high reliability for demanding users. It is not just a drive, but a tool for achieving perfection in work and entertainment.
This drive, built on the basis of 3D TLC NAND flash memory, ensures high reliability and service life, adding confidence in the safety of your data. An important advantage of this model is the optimized power consumption of only 7.6 W, which ensures efficient operation without excessive heat or battery loss, which is especially important for portable devices.
The incredible random read/write speed of up to 2,200K/2,600K IOPS allows you to solve parallel data processing tasks with impressive efficiency. This makes the SSD 9100 PRO an excellent choice for high-performance work with artificial intelligence or graphic designs where every second counts.
The compact design with a thickness of only 2.38mm and a weight of 9g makes it ideal for use in laptops and other devices where space is limited. In addition, support for up to 8 TB of memory provides maximum flexibility in storing the data you need.
Use the Samsung Magician software to optimize the performance and security of your drive. This software provides an intuitive interface, optimization, monitoring and reliable protection of your data.
Advanced thermal efficiency and 5nm controller architecture make the 9100 PRO a model in the SSD class with increased energy efficiency by 49% compared to previous models. You will get exceptional performance stability even during the heaviest loads.
Increase your productivity and open up new opportunities with the Samsung 9100 PRO, the embodiment of innovation and high reliability for demanding users. It is not just a drive, but a tool for achieving perfection in work and entertainment.
Characteristics
- Manufacturer
- Samsung
- Series
- 9100 PRO
- They are also looking for
- швидкі
- Color
- чорний
- Country of manufacture
- Південна Корея
- Form factor
- M.2
- (Assembly) Consumer power
- 6 Вт
- weight
- 9 г
- Dimensions
- 80.15 x 22.15 x 2.38 мм
- Connection interface
- PCI Express 5.0 x4
- The amount of memory
- 4 TB
- thickness
- 2.38 мм
- Drive type
- внутрішній
- Type of flash memory
- 3D TLC NAND
- Reading speed
- 14800 Mb/s
- Recording speed
- 13400 Mb/s
- Working on rejection
- 1.5 млн. годин
- TBW
- 2400
- Energy consumption
- 7.6 Вт
- Standard size M2
- M.2 2280
Loading...
